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RBQ30TB45BNZ Datasheet, Equivalent, Barrier Diode.Schottky Barrier Diode Schottky Barrier Diode |
Part | RBQ30TB45BNZ |
---|---|
Description | Schottky Barrier Diode |
Feature | Schottky Barrier Diode
RBQ30TB45BNZ
lAp plication Switching power supply
lDime nsions (Unit : mm)
10. 0±00. . 31 φ3. 2 ±0. 2 4. 5±00. . 31 2. 8±00. . 21 Data Sh eet lStructure 0. 4 0. 2 15. 0± 12. 0± 0. 2 lFeatures 1) Power Mold Type 2) Hi gh reliability 3) Low IR lConstruction Silicon epitaxial planar type 5. 0±0. 2 8. 0 1. 6 MAX ① 14. 0±0. 5 1. 2 1. 3 0. 8 (1) (3) 2. 45±0. 5 2. 45±0. 5 ROH M : TO-220FN (2 pin) 2. 6±0. 5 0. 75±00 . . 015 1 Manufacture date (1) Cathode lPackage Dimensions (Unit : mm) 7 540 (3) Anode 34. 5 lAbsolute Maximum Rat ings (Tc= 25°C) Parameter Symbol Re petitive peak reverse voltage . |
Manufacture | ROHM |
Datasheet |
Part | RBQ30TB45BNZ |
---|---|
Description | Schottky Barrier Diode |
Feature | Schottky Barrier Diode
RBQ30TB45BNZ
lAp plication Switching power supply
lDime nsions (Unit : mm)
10. 0±00. . 31 φ3. 2 ±0. 2 4. 5±00. . 31 2. 8±00. . 21 Data Sh eet lStructure 0. 4 0. 2 15. 0± 12. 0± 0. 2 lFeatures 1) Power Mold Type 2) Hi gh reliability 3) Low IR lConstruction Silicon epitaxial planar type 5. 0±0. 2 8. 0 1. 6 MAX ① 14. 0±0. 5 1. 2 1. 3 0. 8 (1) (3) 2. 45±0. 5 2. 45±0. 5 ROH M : TO-220FN (2 pin) 2. 6±0. 5 0. 75±00 . . 015 1 Manufacture date (1) Cathode lPackage Dimensions (Unit : mm) 7 540 (3) Anode 34. 5 lAbsolute Maximum Rat ings (Tc= 25°C) Parameter Symbol Re petitive peak reverse voltage . |
Manufacture | ROHM |
Datasheet |
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