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SiHB22N60AE
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
96 12 25 Single
0.156
D2PAK (TO-263)
GD S
D
G S
N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching an...
