Power Rectifier. NRVBA120E Datasheet

NRVBA120E Rectifier. Datasheet pdf. Equivalent

NRVBA120E Datasheet
Recommendation NRVBA120E Datasheet
Part NRVBA120E
Description Surface Mount Schottky Power Rectifier
Feature NRVBA120E; MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employ.
Manufacture ON Semiconductor
Datasheet
Download NRVBA120E Datasheet




ON Semiconductor NRVBA120E
MBRA120E, NRVBA120E
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a metaltosilicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for OverVoltage Protection
Optimized for Low Leakage Current
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
Available in 12 mm Tape, 5000 Units per 13 inch Reel
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
Marking: B1E2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 125°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
20
1.0
40
V
A
A
Storage Temperature
Tstg 55 to +150 °C
Operating Junction Temperature
TJ 55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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SCHOTTKY BARRIER
RECTIFIER
1 AMPERE
20 VOLTS
MARKING
DIAGRAM
SMA
CASE 403D
B1E2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRA120ET3G
SMA
5000 / Tape & Reel
(PbFree)
NRVBA120ET3G SMA
5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 Rev. 4
1
Publication Order Number:
MBRA120ET3/D



ON Semiconductor NRVBA120E
MBRA120E, NRVBA120E
THERMAL CHARACTERISTICS
Characteristic
Symbol
5 mm x 5 mm
(Note 2)
1 Inch x 1/2 inch
(Note 3)
Unit
Thermal Resistance JunctiontoLead
Thermal Resistance JunctiontoAmbient
ELECTRICAL CHARACTERISTICS
RθJL
RθJA
34
138
20 °C/W
77
Maximum Instantaneous Forward Voltage (Note 1), See Figure 2
VF
TJ = 25°C
TJ = 100°C
V
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
0.455
0.530
0.595
0.360
0.455
0.540
Maximum Instantaneous Reverse Current, See Figure 4
IR TJ = 25°C
TJ = 100°C
mA
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
10 1600
1.0 500
0.5 300
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 250 μs, Duty Cycle 2%.
2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads).
3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads).
10 10
150°C
125°C
100°C
25°C
1
40°C
1
150°C
100°C
25°C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1
1E02
1E03
1E04
1E05
150°C
125°C
100°C
75°C
1E02
1E03
1E04
1E05
150°C
100°C
1E06
1E07
25°C
1E06
1E07
25°C
1E08
0
1E08
2 4 6 8 10 12 14 16 18 20
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
2 4 6 8 10 12 14 16 18
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
20
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ON Semiconductor NRVBA120E
MBRA120E, NRVBA120E
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
dc
SQUARE WAVE
20 40 60 80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
SQUARE WAVE
dc
0.2 0.4 0.6 0.8 1 1.2 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1.6
1 D = 0.5
0.3
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01 0.1
T, TIME (sec)
Figure 7. Thermal Resistance
1
10 100 1000
1000
TJ = 25°C
100
10
0 2 4 6 8 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Junction Capacitance
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