Power Rectifier. NRVBM120ET3G Datasheet

NRVBM120ET3G Rectifier. Datasheet pdf. Equivalent

NRVBM120ET3G Datasheet
Recommendation NRVBM120ET3G Datasheet
Part NRVBM120ET3G
Description Surface Mount Schottky Power Rectifier
Feature NRVBM120ET3G; MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G Surface Mount Schottky Power Rectifier POWERMI.
Manufacture ON Semiconductor
Datasheet
Download NRVBM120ET3G Datasheet




ON Semiconductor NRVBM120ET3G
MBRM120ET1G,
NRVBM120ET1G,
MBRM120ET3G,
NRVBM120ET3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITEemploys the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITEhas the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
POWERMITEis JEDEC Registered as DO216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 16.3 mg (approximately)
Lead and Mounting Surface Temperature for Soldering Purposes
260C Maximum for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 3
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 20 VOLTS
POWERMITE
CASE 457
STYLE 1
MARKING DIAGRAM
1
M
BCVG
2
BCV
M
G
= Device Code
= Date Code
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRM120ET1G
NRVBM120ET1G
POWERMITE
(PbFree)
POWERMITE
(PbFree)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
MBRM120ET3G
POWERMITE 12,000 /
(PbFree) Tape & Reel
NRVBM120ET3G POWERMITE 12,000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRM120E/D



ON Semiconductor NRVBM120ET3G
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 130C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135C)
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
20
1.0
2.0
50
V
A
A
A
Storage Temperature
Tstg 65 to 150
C
Operating Junction Temperature
TJ 65 to 150 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance JunctiontoLead (Anode) (Note 1)
Thermal Resistance JunctiontoTab (Cathode) (Note 1)
Thermal Resistance JunctiontoAmbient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
Symbol
Rtjl
Rtjtab
Rtja
Value
35
23
277
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
((IIFF
=
=
0.1
1.0
A)
A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
Symbol
VF
IR
Value
TJ = 25C
0.455
0.530
0.595
TJ = 100C
0.360
0.455
0.540
TJ = 25C
10
1.0
0.5
TJ = 100C
1600
500
300
Unit
V
mA
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2



ON Semiconductor NRVBM120ET3G
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
10
TJ = 150C
TJ = 100C
1.0
TJ = 25C
TJ = 40C
10
TJ = 150C
TJ = 100C
1.0
TJ = 25C
0.1
0.2
0.4
0.6 0.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.6 0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 2. Maximum Forward Voltage
100E3
10E3
1E3
100E6
10E6
1E6
100E9
10E9
0
TJ = 150C
TJ = 100C
TJ = 25C
5.0 10
15
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E3
10E3
1E3
100E6
10E6
1E6
100E9
10E9
20 0
TJ = 150C
TJ = 100C
TJ = 25C
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc FREQ = 20 kHz
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 65 85 105 125 145
TL, LEAD TEMPERATURE (C)
Figure 5. Current Derating
165
0.7
0.6
SQUARE
WAVE
Ipk/Io = p
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
dc
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1.6
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