Power Rectifier. NRVBM2H100T3G Datasheet

NRVBM2H100T3G Rectifier. Datasheet pdf. Equivalent

NRVBM2H100T3G Datasheet
Recommendation NRVBM2H100T3G Datasheet
Part NRVBM2H100T3G
Description Surface Mount Schottky Power Rectifier
Feature NRVBM2H100T3G; MBRM2H100T3G, NRVBM2H100T3G Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount P.
Manufacture ON Semiconductor
Datasheet
Download NRVBM2H100T3G Datasheet




ON Semiconductor NRVBM2H100T3G
MBRM2H100T3G,
NRVBM2H100T3G
Surface Mount
Schottky Power Rectifier
POWERMITE®
Power Surface Mount Package
The Schottky Powermite® employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite® has the same thermal performance as the SMA while
being 50% smaller in footprint area. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are ACDC and DCDC
converters, reverse battery protection, and “ORing” of multiple supply
voltages and any other application where performance and size are
critical.
Features
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
This is a PbFree Device
Mechanical Characteristics:
Powermite® is JEDEC Registered as D0216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
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SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 100 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
MARKING DIAGRAM
1
M
B2HG
2
M = Date Code
B2H = Device Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRM2H100T3G
Powermite
(PbFree)
12000/Tape &
Reel
NRVBM2H100T3G Powermite 12000/Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 2
1
Publication Order Number:
MBRM2H100/D



ON Semiconductor NRVBM2H100T3G
MBRM2H100T3G, NRVBM2H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(TL = 160°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IO
IFSM
2.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoLead (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
12 °C/W
75 °C/W
260 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
V
0.76
0.84
0.61
0.68
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
20 mA
1.0 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
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2



ON Semiconductor NRVBM2H100T3G
MBRM2H100T3G, NRVBM2H100T3G
TYPICAL CHARACTERISTICS
100 100
150°C 125°C
25°C
10 10
150°C 125°C
25°C
11
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.6
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
10
1 150°C
10
150°C
1
0.1
0.01
0.001
0.0001
125°C
25°C
0.1
0.01
0.001
0.0001
125°C
25°C
0.00001
0
10 20 30 40 50 60 70 80 90
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
0.00001
100 0
10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
4.0
3.5 dc
3.0
RqJL = 12°C/W
2.5 Square Wave
2.0
1.5
1.0
0.5
0
135 140 145 150 155 160 165 170 175
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
3
2.8
2.6
TJ = 175°C
2.4
2.2 Square Wave
2
1.8
1.6 dc
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
IO, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
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