NPN Transistor. NST3904F3T5G Datasheet

NST3904F3T5G Transistor. Datasheet pdf. Equivalent

NST3904F3T5G Datasheet
Recommendation NST3904F3T5G Datasheet
Part NST3904F3T5G
Description NPN Transistor
Feature NST3904F3T5G; NST3904F3T5G NPN General Purpose Transistor The NST3904F3T5G device is a spin−off of our popular SO.
Manufacture ON Semiconductor
Datasheet
Download NST3904F3T5G Datasheet




ON Semiconductor NST3904F3T5G
NST3904F3T5G
NPN General Purpose
Transistor
The NST3904F3T5G device is a spinoff of our popular
SOT23/SOT323/SOT563/SOT963 threeleaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT1123 surface mount package. This device is ideal for
lowpower surface mount applications where board space is at a
premium.
Features
hFE, 100300
Low VCE(sat), 0.4 V
Reduces Board Space
This is a PbFree Device
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 290 mW
(Note 1) 2.3 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 347 mW
(Note 2) 2.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
JunctiontoLead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
12
SOT1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
2M
2 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NST3904F3T5G SOT1123 8000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 1
1
Publication Order Number:
NST3904F3/D



ON Semiconductor NST3904F3T5G
NST3904F3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0)
Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
3. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
td
tr
ts
tf
Min
40
60
6.0
40
70
100
60
30
0.65
200
Max Unit
Vdc
Vdc
Vdc
50 nAdc
300
Vdc
0.2
0.3
Vdc
0.85
1.0
MHz
4.0 pF
8.0 pF
5.0 dB
35
35 ns
275
ns
50
0.28
0.23
IC/IB = 10
VCE(sat) = 150°C
0.18
0.13
25°C
55°C
0.08
0.03
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
400
350 150°C (5.0 V)
300 150°C (1.0 V)
250 25°C (5.0 V)
200 25°C (1.0 V)
150 55°C (5.0 V)
100 55°C (1.0 V)
50
0
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
http://onsemi.com
2



ON Semiconductor NST3904F3T5G
NST3904F3T5G
1.1
IC/IB = 10
1.0
0.9
55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1
2.0
1.8
1.6 IC = 100 mA
1.4
1.2 80 mA
1.0
0.8
0.6
0.4
20 mA
0.2
0
0.0001
60 mA
40 mA
0.001
Ib, BASE CURRENT (A)
Figure 5. Saturation Region
0.01
1.1
VCE = 2.0 V
1.0
0.9
55°C
0.8
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter TurnOn Voltage vs.
Collector Current
8.0
7.5
7.0
6.5
6.0
5.5 Cib
5.0
4.5
4.0
3.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
3.0
2.5
2.0
1.5
1.0
0.5
0
Cob
5.0 10 15 20 25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
30
http://onsemi.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)