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Mos-Tech Semiconductor Co.,LTD.
N-Channel Enhancement Mode Field Effect Transistor
MT2306
FEATURES
ƽSuper high dense cell design for low RDS(ON) ƽRugged and reliable ƽSimple drive requirement ƽSOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m¡) Typ
20V 4.0A
46 @ VGS=10V 65@ VGS=4.5V
NOTE˖The MT2306 is available in a lead-free package
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