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CPM2-1200-0040B

Part Number	CPM2-1200-0040B
Manufacturer	Cree
Description	Silicon Carbide Power MOSFET
Published	Apr 10, 2017
Detailed Description	VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 ...
Datasheet	CPM2-1200-0040B PDF File

Overview

VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Chip Outline • New C2M SiC MOSFET technlogy • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drives •...

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