SAMWIN
SW1N55D
N-channel IPAK MOSFET
Features
TO-251
■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better...
