SAMWIN
SW22N60U
N-channel TO-3P MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.35Ω)@VGS=10V ■ Gate Charge (Typ 124 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better...
