DatasheetsPDF.com

NGTB10N60R2DT4G

ON Semiconductor
Part Number NGTB10N60R2DT4G
Manufacturer ON Semiconductor
Description IGBT
Published Apr 29, 2017
Detailed Description NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (t...
Datasheet PDF File NGTB10N60R2DT4G PDF File

NGTB10N60R2DT4G
NGTB10N60R2DT4G

Overview
NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.
onsemi.
com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.
7V (typ) [IC=10A, VGE=15V]  IGBT tf=65ns (typ) Diode VF=1.
5V (typ) [IF=10A] Diode trr=90ns (typ) 5s Short Circuit Capability Applications  General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C *2 @Tc=100C *2 Collector Current (Peak) Pulse width Llimited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)