WNMD6003
Dual N-Channel, 60V, 0.30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V 60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversio...
