WNM6001
Single N-Channel, 60V, 0.50A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V 60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, powe...
