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HCT802TXV
Dual Enhancement Mode MOSFET
Description
Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features: 6 pad surface mount package VDS = 90V RDS(on) < 5Ω ID(on) N-Channel = 1.5A | P-Channel = 1.1A Two devices selected for VDS ID(on) and RDS(on) similarity Full TX Processing Available Gold plated contacts Description: HCT802 offers an N‐Channel and P‐Channel MOS
transistor
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