DatasheetsPDF.com



Part Number MBM29F016A-70
Manufacturers Fujitsu
Logo Fujitsu
Description 16M (2M x 8) BIT FLASH MEMORY
Datasheet MBM29F016A-70 DatasheetMBM29F016A-70 Datasheet (PDF)

  MBM29F016A-70   MBM29F016A-70
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20844-4E MBM29F016A-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) • Minimum 100,000 write/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase. • Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or any sector • Embedded Program™ Algorithms Automatically programs and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of pro.



TIP41C MBM29F016A-70 MBM29F016A-90


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)