FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20844-4E
MBM29F016A-70/-90/-12
s FEATURES
• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) • Minimum 100,000 write/erase cycles • High performance
70 ns maximum access time • Sector erase architecture
Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase. • Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or any sector • Embedded Program™ Algorithms Automatically programs and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of pro.