FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
32M (4M × 8) BIT
DS05-20869-3E
MBM29F033C-70/-90/-12
s FEATURES
• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
• 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 write/erase cycles • High performance
70 ns maximum access time • Sector erase architecture
Uniform sectors of 64K bytes each Any combination of sectors can be erased. Also supports full chip erase • Embedded EraseTM Algorithms Automatically preprograms and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically programs and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/BUSY output (RY/BY) Hardware method for detection of program .