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Part Number MBM29F200TC-70
Manufacturers Fujitsu
Logo Fujitsu
Description 2M (256K x 8/128K x 16) BIT FLASH MEMORY
Datasheet MBM29F200TC-70 DatasheetMBM29F200TC-70 Datasheet (PDF)

  MBM29F200TC-70   MBM29F200TC-70
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-3E FLASH MEMORY CMOS www.datasheet4u.com 2M (256K × 8/128K × 16) BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verif.



MBM29F200TC-55 MBM29F200TC-70 MBM29F200TC-90


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