MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3DRAIN VN0610LL
2 GATE
MAXIMUM RATINGS
®
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage (RGS = 1 MΩ)
Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
Drain Current Continuous Pulsed
Total Power Dissipation @ TA = 25°C Dera...
