J304 Datasheet PDF


Part Number

J304

Description

N-Channel JFETs

Manufacture

Vishay

Total Page 7 Pages
PDF Download
Download J304 Datasheet PDF


Features Datasheet pdf N-Channel JFETs J304/305 Vishay Silicon ix PRODUCT SUMMARY Part Number J304 J 305 VGS(off) (V) −2 to −6 −0.5 t o −3 V(BR)GSS Min (V) −30 −30 g fs Min (mS) 4.5 3 IDSS Min (mA) 5 1 F EATURES D Excellent High Frequency Gain : J304, Gps 11 dB (typ) @ 400 MHz D Ver y Low Noise: 3.8 dB (typ) @ 400 MHz D V ery Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 10 0 mA BENEFITS D Wideband High Gain D V ery High System Sensitivity D High Qual ity of Amplification D High-Speed Switc hing Capability D High Low-Level Signal Amplification APPLICATIONS D High-Fre quency Amplifier/Mixer D Oscillator D S ample-and-Hold D Very Low Capacitance S witches DESCRIPTION The J304/305 n-channel JFET.
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J304 Datasheet
N-Channel JFETs
J304/305
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J304
J305
VGS(off) (V)
2 to 6
0.5 to 3
V(BR)GSS Min (V)
30
30
gfs Min (mS)
4.5
3
IDSS Min (mA)
5
1
FEATURES
D Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
D Very Low Noise: 3.8 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
S1
D2
G3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
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