MPSA55 SILICON TRANSISTORS Datasheet

MPSA55 Datasheet, PDF, Equivalent


Part Number

MPSA55

Description

COMPLEMENTARY SILICON TRANSISTORS

Manufacture

Central Semiconductor

Total Page 5 Pages
Datasheet
Download MPSA55 Datasheet


MPSA55
MPSA05 MPSA06 NPN
MPSA55 MPSA56 PNP
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA05, MPSA55
series devices are complementary silicon transistors
designed for low power output and medium power
driver applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
JC
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICES
VCE=60V
BVCEO
IC=1.0mA (MPSA05, 55)
BVCEO
IC=1.0mA (MPSA06, 56)
BVEBO
IE=100μA
VCE(SAT) IC=100mA, IB=10mA
VBE(ON)
VCE=1.0V, IC=100mA
hFE VCE=1.0V, IC=10mA
hFE VCE=1.0V, IC=100mA
fT VCE=2.0V, IC=10mA, f=100MHz (NPN)
fT VCE=1.0V, IC=100mA, f=100MHz (PNP)
MIN
60
80
4.0
100
100
100
50
MPSA05
MPSA55
60
MPSA06
MPSA56
80
60 80
4.0
500
625
1.5
-65 to +150
200
83.3
MAX
100
100
0.25
1.2
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
MHz
R9 (21-June 2019)

MPSA55
MPSA05 MPSA06 NPN
MPSA55 MPSA56 PNP
COMPLEMENTARY
SILICON TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R9 (21-June 2019)


Features MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP COMP LEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTIO N: The CENTRAL SEMICONDUCTOR MPSA05, MP SA55 series devices are complementary s ilicon transistors designed for low pow er output and medium power driver appli cations. MARKING: FULL PART NUMBER TO -92 CASE MAXIMUM RATINGS: (TA=25°C) C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuou s Collector Current Power Dissipation P ower Dissipation (TC=25°C) Operating a nd Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA JC ELECTRICAL CHARACTERISTICS: (TA=2 5°C) SYMBOL TEST CONDITIONS ICBO VCB =Rated VCBO ICES VCE=60V BVCEO IC=1 .0mA (MPSA05, 55) BVCEO IC=1.0mA (MPS A06, 56) BVEBO IE=100μA VCE(SAT) IC =100mA, IB=10mA VBE(ON) VCE=1.0V, IC= 100mA hFE VCE=1.0V, IC=10mA hFE VCE=1 .0V, IC=100mA fT VCE=2.0V, IC=10mA, f= 100MHz (NPN) fT VCE=1.0V, IC=100mA, f=100MHz (PNP) MIN 60 80 .
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