isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·Complement to Type BD637 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25...
