2N3867 TRANSISTOR Datasheet

2N3867 Datasheet, PDF, Equivalent


Part Number

2N3867

Description

PNP SILICON POWER SWITCHING TRANSISTOR

Manufacture

CDIL

Total Page 4 Pages
Datasheet
Download 2N3867 Datasheet


2N3867
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER SWITCHING TRANSISTOR
2N3868
TO-39
Metal Can Package
Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
PD
Tj, Tstg
VALUE
60
60
4.0
3.0
10
0.5
6.0
34.3
1.0
5.71
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
29
175
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut off Current
DC Current Gain
SYMBOL
VCEO
VCBO
VEBO
ICEX
ICBO
*hFE
Collector Emitter Saturation Voltage
*VCE (sat)
Base Emitter Saturation Voltage
*VBE (sat)
TEST CONDITION
IC=1mA, IB=0
IC=100µA, IE=0
IE=100µA, IC=0
VCE=60V, VBE (off)=2V
VCB=60V, IE=0,Tc=150ºC
IC=500mA, VCE=1V
IC=1.5A, VCE=2V
IC=2.5A, VCE=3V
IC=3A, VCE=5V
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
MIN
60
60
4.0
35
30
20
20
0.9
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MAX
1.0
150
150
0.50
0.75
1.30
1.0
1.4
2.0
UNITS
V
V
V
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
µA
µA
V
V
V
V
V
V
2N3868Rev031105E
Continental Device India Limited
Data Sheet
Page 1 of 4

2N3867
PNP SILICON POWER SWITCHING TRANSISTOR
2N3868
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
SYMBOL
**fT
Cob
Cib
TEST CONDITION
IC=100mA,VCE=5V, f=20MHz
VCB=10V, IE=0, f=0.1MHz
VEB=3V, IC=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
** fT = lhfel. ftest
2N3868Rev031105E
td VCC=30V, VBE(off)=0, IC=1.5A,
tr IB1=150mA
ts VCC=30V, IC=1.5A,
tf IB1=IB2=150mA
MIN
60
MAX
120
1000
35
65
325
75
UNITS
MHz
pF
pF
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 4


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Pac kage Designed for High Speed, Medium C urrent Switching and High Frequency Amp lifier Applications ABSOLUTE MAXIMUM R ATINGS DESCRIPTION Collector Emitter Vo ltage Collector Base Voltage Emitter Ba se Voltage Collector Current - Continuo us Peak Base Current Power Dissipation at Tc=25ºC Derate Above 25ºC Power Di ssipation at Ta=25ºC Derate Above 25º C Operating And Storage Junction Temper ature Range SYMBOL VCEO VCBO VEBO IC I B PD PD Tj, Tstg VALUE 60 60 4.0 3.0 1 0 0.5 6.0 34.3 1.0 5.71 - 65 to +200 T HERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth ( j-c) Rth (j-a) 29 175 ELECTRICAL CHAR ACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION Collector Emitt er Voltage Collector Base Voltage Emitt er Base Voltage Collector Cut Off Curre nt Collector Cut off Current DC Current Gain SYMBOL VCEO VCBO .
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