2N4861 Transistor Datasheet

2N4861 Datasheet, PDF, Equivalent


Part Number

2N4861

Description

N-Channel Silicon Junction Field-Effect Transistor

Manufacture

InterFET

Total Page 1 Pages
Datasheet
Download 2N4861 Datasheet


2N4861
01/99
B-15
2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at TA = 25¡C
2N4856, 2N4857, 2N4858
Reverse Gate Source Voltage
– 40 V
Reverse Gate Drain Voltage
– 40 V
Continuous Device Dissipation
1.8 W
Power Derating
10 mW/°C
Continuous Forward Gate Current
50 mA
2N4859, 2N4860, 2N4861
– 30 V
– 30 V
1.8 W
10 mW/°C
50 mA
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
Gate Reverse Current
2N4856, 2N4857, 2N4858
Gate Reverse Current
2N4859, 2N4860, 2N4861
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Drain Source ON Voltage
Dynamic Electrical Characteristics
Common Source ON Resistance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
V(BR)GSS
IGSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
VDS(ON)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
2N4856
2N4859
Min Max
2N4857
2N4860
Min Max
2N4858
2N4861
Min Max
Unit
Process NJ132
Test Conditions
– 40 – 40 – 40 V
– 30 – 30 – 30 V
– 250
– 250
– 250 pA
– 500
– 500
– 500 nA
– 250
– 250
– 250 pA
– 500
– 500
– 500 nA
– 4 – 10 – 2 – 6 – 0.8 – 4 V
50 20 100 8 80 mA
250 250 250 pA
500 500 500 nA
0.75 0.5
(20) (10)
0.5 V
(5) (mA)
IG = – 1 µA, VDS = ØV
IG = – 1 µA, VDS = ØV
VGS = – 20V, VDS = ØV
VGS = – 20V, VDS = ØV
VGS = – 15V, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 15V, ID = 0.5 nA
VDS = 15V, VGS = ØV
VDS = 15V, VGS = – 10V
VDS = 15V, VGS = – 10V
VGS = ØV, ID = ( )
TA = 150°C
TA = 150°C
TA = 150°C
25
40
60
VGS = ØV, ID = Ø A
f = 1 kHz
18
18
18 pF
VDS = ØV, VGS = – 10V
f = 1 MHz
8
8
8 pF
VDS = ØV, VGS = – 10V
f = 1 MHz
6 6 10 ns
(20)
[–10]
3
(20)
(10)
[– 6]
4
(10)
(5) (mA)
[– 4] [V]
10 ns
(5) (mA)
VDD = 10V, VGS = ØV
ID(ON) = ( )
VGS(OFF) = [ ]
[–10] [– 6] [– 4] [V] (2N4856, 2N4859) RL = 465
25
50
100 ns
(2N4857, 2N4860) RL = 953
(20) (10)
(5) (mA) (2N4858, 2N4861) RL = 1910
[–10] [– 6] [– 4] [V]
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate &Case
Surface Mount
SMP4856, SMP4857, SMP4858,
SMP4859, SMP4860, SMP4861
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375


Features 01/99 B-15 2N4856, 2N4857, 2N4858, 2N4 859, 2N4860, 2N4861 N-Channel Silicon J unction Field-Effect Transistor ¥ Cho ppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡ C 2N4856, 2N4857, 2N4858 Reverse Gate Source Voltage – 40 V Reverse Gate Drain Voltage – 40 V Continuous Dev ice Dissipation 1.8 W Power Derating 10 mW/°C Continuous Forward Gate Cur rent 50 mA 2N4859, 2N4860, 2N4861 – 30 V – 30 V 1.8 W 10 mW/°C 50 mA A t 25°C free air temperature: Static El ectrical Characteristics Gate Source Br eakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 Gate Reverse Cur rent 2N4856, 2N4857, 2N4858 Gate Revers e Current 2N4859, 2N4860, 2N4861 Gate S ource Cutoff Voltage Drain Saturation C urrent (Pulsed) Drain Cutoff Current Dr ain Source ON Voltage Dynamic Electrica l Characteristics Common Source ON Resi stance Common Source Input Capacitance Common Source Reverse Transfer Capacita nce Switching Characteristics Turn ON Delay Time Rise Time Turn.
Keywords 2N4861, datasheet, pdf, InterFET, N-Channel, Silicon, Junction, Field-Effect, Transistor, N4861, 4861, 861, 2N486, 2N48, 2N4, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)