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MFQ960C Datasheet, Equivalent, DUAL-IN-LINE TMOS.QUAD DUAL-IN-LINE TMOS QUAD DUAL-IN-LINE TMOS |
| Part | MFQ960C |
|---|---|
| Description | QUAD DUAL-IN-LINE TMOS |
| Feature | MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATIN GS
Rating
Symbol MFQ930C MFQ960C MFQ99 0C
CASE 632-02, STYLE 1
TO-116
QUAD
DU AL-IN-LINE
TMOS
N-CHANNEL — ENHANCEME NT
Drain-Source Voltage
Drain-Gate Vol tage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
vDs vDg vgs
id
Idm
@Total Device Dissipation T/ = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
35 60 90 35 60 90
±30
2. 0 3. 0 Each Tot al Transistor Device PD TJ. Tstg 0. 5 17. 0 2. 0 66. 6 - 55 to + 1 50 Refer to MFE930 for graphs. ELECTRICAL CHARAC TERISTICS (TA 25°C unless otherwise n oted. ) Characterist . |
| Manufacture | Motorola |
| Datasheet |
| Part | MFQ960C |
|---|---|
| Description | QUAD DUAL-IN-LINE TMOS |
| Feature | MFQ930C
MFQ960C
MFQ990C
MAXIMUM RATIN GS
Rating
Symbol MFQ930C MFQ960C MFQ99 0C
CASE 632-02, STYLE 1
TO-116
QUAD
DU AL-IN-LINE
TMOS
N-CHANNEL — ENHANCEME NT
Drain-Source Voltage
Drain-Gate Vol tage
Gate-Source Voltage
Drain Current Continuous (1) Pulsed (2)
vDs vDg vgs
id
Idm
@Total Device Dissipation T/ = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
35 60 90 35 60 90
±30
2. 0 3. 0 Each Tot al Transistor Device PD TJ. Tstg 0. 5 17. 0 2. 0 66. 6 - 55 to + 1 50 Refer to MFE930 for graphs. ELECTRICAL CHARAC TERISTICS (TA 25°C unless otherwise n oted. ) Characterist . |
| Manufacture | Motorola |
| Datasheet |
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