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MFQ960C Datasheet, Equivalent, DUAL-IN-LINE TMOS.

QUAD DUAL-IN-LINE TMOS

QUAD DUAL-IN-LINE TMOS

 

 

 

Part MFQ960C
Description QUAD DUAL-IN-LINE TMOS
Feature MFQ930C MFQ960C MFQ990C MAXIMUM RATIN GS Rating Symbol MFQ930C MFQ960C MFQ99 0C CASE 632-02, STYLE 1 TO-116 QUAD DU AL-IN-LINE TMOS N-CHANNEL — ENHANCEME NT Drain-Source Voltage Drain-Gate Vol tage Gate-Source Voltage Drain Current Continuous (1) Pulsed (2) vDs vDg vgs id Idm @Total Device Dissipation T/ = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range 35 60 90 35 60 90 ±30 2.
0 3.
0 Each Tot al Transistor Device PD TJ.
Tstg 0.
5 17.
0 2.
0 66.
6 - 55 to + 1 50 Refer to MFE930 for graphs.
ELECTRICAL CHARAC TERISTICS (TA 25°C unless otherwise n oted.
) Characterist .
Manufacture Motorola
Datasheet
Download MFQ960C Datasheet
Part MFQ960C
Description QUAD DUAL-IN-LINE TMOS
Feature MFQ930C MFQ960C MFQ990C MAXIMUM RATIN GS Rating Symbol MFQ930C MFQ960C MFQ99 0C CASE 632-02, STYLE 1 TO-116 QUAD DU AL-IN-LINE TMOS N-CHANNEL — ENHANCEME NT Drain-Source Voltage Drain-Gate Vol tage Gate-Source Voltage Drain Current Continuous (1) Pulsed (2) vDs vDg vgs id Idm @Total Device Dissipation T/ = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range 35 60 90 35 60 90 ±30 2.
0 3.
0 Each Tot al Transistor Device PD TJ.
Tstg 0.
5 17.
0 2.
0 66.
6 - 55 to + 1 50 Refer to MFE930 for graphs.
ELECTRICAL CHARAC TERISTICS (TA 25°C unless otherwise n oted.
) Characterist .
Manufacture Motorola
Datasheet
Download MFQ960C Datasheet

MFQ960C

MFQ960C
MFQ960C

MFQ960C

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