SSF4N60
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
Vdss = 600V Id = 4A Rdson = 2.3Ω (typ.)
Description The SSF4N60 is a new generation of high voltage N–Channel enhancement mode ...
