BR8810MF
Rev.D Oct.-2015
/ Descriptions SOT23-6 N MOS 。 ESD 。 N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested.
/ Features ， RDS(on)，。 advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V／VGSS=±12V ID=7A RDS(ON)=16mΩ(typ.)@VGS=4.5V RDS(ON)=19mΩ(typ.)@VGS=2.5V RDS(ON)=24mΩ(typ.)@VGS=1.8V
/ Applicat...
