PNP TRANSISTOR. 2SA562M Datasheet


2SA562M TRANSISTOR. Datasheet pdf. Equivalent


Part Number

2SA562M

Description

SILICON PNP TRANSISTOR

Manufacture

LZG

Total Page 2 Pages
Datasheet
Download 2SA562M Datasheet


2SA562M
2SA562M(3CG562M)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频小功率放大,激励级放大及开关电路。
Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications.
特点:极好的 hFE 特性,与 2SC1959M(3DG1959M)互补。
Features: Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M).
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO -35 V
VCEO -30 V
VEBO
-5.0
V
IC
-500
mA
IB
-100
mA
PC 400 mW
Tj 150 ℃
Tstg -55~150 ℃
电性能参数/Electrical Characteristics(Ta=25℃)
参数符号
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
测试条件
Test Condition
VCB=-35V
VEB=-5.0V
VCE=-1.0V
VCE=-6.0V
IC=-100mA
VCE=-1.0V
VCE=-6.0V
VCB=-6.0V
IE=0
IC=0
IC=-100mA
IC=-400mA
IB=-10mA
IC=-100mA
IC=-20mA
IE=0 f=1.0MHz
最小值
Min
70
25
h 分档/FE(1)
hFE(1)
classifications:
hFE(1)分档
hFE(1) Classifications
hFE(1)范围
hFE(1) Range
印章
Marking
O
70~140
HVAO
数值
Rating
典型值
Typ
最大值
Max
-0.1
-0.1
240
单位
Unit
μA
μA
-0.1
-0.8
200
13
-0.25
-1.0
V
V
MHz
pF
Y
120~240
HVAY
http://www.lzg.so

2SA562M
2SA562M(3CG562M)
http://www.lzg.so


Features 2SA562M(3CG562M) PNP /SILICON PNP TRAN SISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier , switching applications. : hFE , 2SC19 59M(3DG1959M) Features: Excellent hFE l inearity, complementary pair with 2SC19 59M(3DG1959M). /Absolute Maximum Ratin gs(Ta=25℃) Symbol Rating Uni t VCBO -35 V VCEO -30 V VEBO -5.0 V IC -500 mA IB -100 mA PC 400 m W Tj 150 ℃ Tstg -55~150 ℃ /Ele ctrical Characteristics(Ta=25℃) Sym bol ICBO IEBO hFE(1) hFE(2) VCE(sat) VB E fT Cob Test Condition VCB=-35V VEB =-5.0V VCE=-1.0V VCE=-6.0V IC=-100mA VC E=-1.0V VCE=-6.0V VCB=-6.0V IE=0 IC=0 IC=-100mA IC=-400mA IB=-10mA IC=-100mA IC=-20mA IE=0 f=1.0MHz Min 70 25 h / FE(1) hFE(1) classifications: hFE( 1) hFE(1) Classifications hFE(1) .
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