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Gate Thyristor. R1271NS12D Datasheet

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Gate Thyristor. R1271NS12D Datasheet






R1271NS12D Thyristor. Datasheet pdf. Equivalent




R1271NS12D Thyristor. Datasheet pdf. Equivalent





Part

R1271NS12D

Description

Distributed Gate Thyristor



Feature


www.DataSheet4U.com WESTCODE Date:- 14 Jun, 2001 Data Sheet Issue:- 1 Distrib uted Gate Thyristor Types R1271NS10x to R1271NS12x Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Re petitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltag e, (note 1) Repetitive peak reverse vol tage, (note 1) Non-repetitive peak reve rse voltage, (note.
Manufacture

Westcode Semiconductors

Datasheet
Download R1271NS12D Datasheet


Westcode Semiconductors R1271NS12D

R1271NS12D; 1) MAXIMUM LIMITS 1000-1200 1000-1200 1000-1200 1100-1300 UNITS V V V V IT( AV) IT(AV) IT(AV) IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t diT/dt VRGM PG(AV) PGM V GD THS Tstg OTHER RATINGS Mean on-stat e current, Tsink=55°C, (note 2) Mean o n-state current. Tsink=85°C, (note 2) Mean on-state current. Tsink=85°C, (no te 3) Nominal RMS on-state current, Tsi nk=25°C, (note 2) D.C.


Westcode Semiconductors R1271NS12D

. on-state current, Tsink=25°C, (note 4 ) Peak non-repetitive surge tp=10ms, VR M=0.6VRRM, (note 5) Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) I2t capacity for fusing tp=10ms, VRM=0.6VR RM, (note 5) I2t capacity for fusing tp =10ms, VRM≤10V, (no .


Westcode Semiconductors R1271NS12D

.

Part

R1271NS12D

Description

Distributed Gate Thyristor



Feature


www.DataSheet4U.com WESTCODE Date:- 14 Jun, 2001 Data Sheet Issue:- 1 Distrib uted Gate Thyristor Types R1271NS10x to R1271NS12x Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Re petitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltag e, (note 1) Repetitive peak reverse vol tage, (note 1) Non-repetitive peak reve rse voltage, (note.
Manufacture

Westcode Semiconductors

Datasheet
Download R1271NS12D Datasheet




 R1271NS12D
www.DataSheet4U.com
WESTCODE
Date:- 14 Jun, 2001
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R1271NS10x to R1271NS12x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
1271
821
458
2599
2050
18.0
19.8
1.62×106
1.96×106
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
Page 1 of 12
June, 2001




 R1271NS12D
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Characteristics
R1271NS10x to R1271NS12x
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
IH
tgd
tgt
Qrr
Qra
Irm
trr
PARAMETER
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time (note 2)
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN. TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- - 2.02 ITM=2000A
V
- - 1.547
V
- - 0.237
m
200 -
- VD=80% VDRM, Linear ramp
V/µs
- - 150 Rated VDRM
- - 150 Rated VRRM
mA
- - 3.0 Tj=25°C
V
- - 300 Tj=25°C
VD=10V, IT=2A
mA
- - 1000 Tj=25°C
mA
- 0.5 1.0 VD=67%VDRM, ITM=2000A, di/dt=60A/µs, µs
- 1.0 2.0 IFG=2A, tr0.5µs, Tcase=25°C
- 200 -
µC
- 120 150 ITM=1000A, tp=1000µs, di/dt=60A/µs,
- 85 - Vr=50V
µC
A
- 2.0 -
µs
- - 22 ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
µs
20 - 25 ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
- - 0.024 Double side cooled
- - 0.048 Single side cooled
K/W
19 - 26
kN
- 510 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for
details of tq codes.
Introduction
The R1271 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses and are therefore suitable for
medium current, medium frequency applications.
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
Page 2 of 12
June, 2001




 R1271NS12D
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WESTCODE Positive development in power electronics
R1271NS10x to R1271NS12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
10
12
VDRM VDSM VRRM
V
1000
1200
VRSM
V
1100
1300
VD VR
DC V
700
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max =
1
tpulse + tq + tv
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
Page 3 of 12
June, 2001



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