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NGTB50N60L2WG

ON Semiconductor
Part Number NGTB50N60L2WG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description IGBT NGTB50N60L2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Tr...
Datasheet PDF File NGTB50N60L2WG PDF File

NGTB50N60L2WG
NGTB50N60L2WG

Overview
IGBT NGTB50N60L2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Motor Drive Inverters • Industrial Switching • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage Collector Current @ TC = 25°C @ TC = 100°C Diode Forwa...


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