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NGTB75N65FL2WG

ON Semiconductor

IGBT


Description
IGBT NGTB75N65FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Sof...



ON Semiconductor

NGTB75N65FL2WG

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