Rambus DRAM. UPD488588FF-C80-40 Datasheet

UPD488588FF-C80-40 DRAM. Datasheet pdf. Equivalent

Part UPD488588FF-C80-40
Description 288M bits Direct Rambus DRAM
Feature DATA SHEET 288M bits Direct Rambus DRAM for High Performance Solution µPD488588FF-C80-40 (512K wor.
Manufacture Elpida Memory
Download UPD488588FF-C80-40 Datasheet

DATA SHEET 288M bits Direct Rambus DRAM for High Performanc UPD488588FF-C80-40 Datasheet
Recommendation Recommendation Datasheet UPD488588FF-C80-40 Datasheet

288M bits Direct Rambus DRAM
for High Performance Solution
µPD488588FF-C80-40 (512K words × 18 bits × 32s banks)
The Direct Rambus DRAM (Direct RDRAM) is a
general purpose high-performance memory device
suitable for use in a broad range of applications
including computer memory, graphics, video, and any
other application where high bandwidth and low
latency are required.
The µPD488588FF is 288Mbits Direct Rambus DRAM
(RDRAM), organized as 16M words by 18 bits.
The use of Rambus Signaling Level (RSL) technology
permits 800MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data
transfers at 1.25ns per two bytes (10ns per sixteen
The architecture of the Direct RDRAMs allows the
highest sustained bandwidth for multiple, simultaneous
randomly addressed memory transactions.
The separate control and data buses with independent
row and column control yield over 95% bus efficiency.
The Direct RDRAM’s four banks support up to four
simultaneous transactions.
System oriented features for mobile, graphics and
large memory systems include power management,
byte masking.
The µPD488588FF is offered in a CSP horizontal
package suitable for desktop as well as low-profile
add-in card and mobile applications. Direct RDRAMs
operate from a 2.5V supply.
Highest sustained bandwidth per DRAM device
— 1.6 GB/s sustained data transfer rate
— Separate control and data buses for maximized
— Separate row and column control buses for easy
scheduling and highest performance
— 32 banks: four transactions can take place
simultaneously at full bandwidth data rates
Low latency features
— Write buffer to reduce read latency
— 3 precharge mechanisms for controller flexibility
— Interleaved transactions
Advanced power management:
— Multiple low power states allows flexibility in power
consumption versus time to active state
— Power-down self-refresh
Overdrive current mode
Organization: 2K bytes pages and 32 banks, x 18
Uses Rambus Signaling Level (RSL) for up to
800MHz operation
Package : 80-ball FBGA (µ BGA) (17.16 × 10.2)
The µPD488588FF is most appropriate for the
applications, such as consumer products demanding
vivid animations, processor memory for multimedia
and 3D graphics, network processing and storage
systems requiring scalability to accommodate future
Document No. E0251N20 (Ver. 2.0)
Date Published July 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Ordering Information
Part number
words × bits × Internal
Clock frequency
MHz (max.)
/RAS access
time (ns)
µ PD488588FF-C80-40-DH1
512K x 18 x 32s
80-ball FBGA (µ BGA)
(17.16 × 10.2)
Note: The “32s” designation indicates that this RDRAM core is composed of 32 banks which use a “split” bank
2 Data Sheet E0251N20 (Ver. 2.0)

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