NPN transistor. MJE13003DGT Datasheet

MJE13003DGT transistor. Datasheet pdf. Equivalent

Part MJE13003DGT
Description Silicon NPN transistor
Feature MJE13003DGT Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a S.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download MJE13003DGT Datasheet

MJE13003DGT Rev.E Mar.-2016 DATA SHEET / Descriptions SOT MJE13003DGT Datasheet
Recommendation Recommendation Datasheet MJE13003DGT Datasheet





MJE13003DGT
MJE13003DGT
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.

特征 / Features
快速转换。
High Speed Switching

用途 / Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters switching ,regulators, etc.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
PIN1Base
PIN 2Collector
PIN 3Emitter
印章代码 / Marking
Marking
H03G
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MJE13003DGT
MJE13003DGT
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC(Ta=25)
Tj
Tsag
DATA SHEET
数值
Rating
600
400
9.0
1.3
1.0
150
-55150
单位
Unit
V
V
V
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-Off Current
Collector cut-off current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Fall time
Storage time
Transition Frequency
符号
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
tf
ts
fT
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
IC=0
VCB=600V IE=0
VCE=400V IB=0
VEB=9.0V IC=0
VCE=5V
IC=200mA
VCE=5V
IC=1mA
VCE=5V
IC=1.2A
IC=500mA IB=100mA
IC=1.0A
IB=500mA
IC=500mA IB=100mA
VCE=5V
(UI9600)
VCE=10V
f=1MHz
IC=0.25A
IC=0.1A
最小值 典型值 最大值 单位
Min Typ Max Unit
600 V
400 V
9.0 V
0.1 mA
0.1 mA
0.1 mA
10 40
7
5
0.5 V
0.6 V
1.2 V
0.8 μS
3.5 μS
5 MHz
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