NPN transistor. MJE13001DE1 Datasheet

MJE13001DE1 transistor. Datasheet pdf. Equivalent

Part MJE13001DE1
Description Silicon NPN transistor
Feature MJE13001DE1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download MJE13001DE1 Datasheet

MJE13001DE1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO- MJE13001DE1 Datasheet
Recommendation Recommendation Datasheet MJE13001DE1 Datasheet





MJE13001DE1
MJE13001DE1
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
耐压高,快速转换。
High Voltage Capability High Speed Switching.
用途 / Applications
主要用于节能灯,日光灯电子镇流器及其它开关,振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJE13001DE1
MJE13001DE1
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tsag
DATA SHEET
数值
Rating
600
400
9.0
0.5
1.0
150
-55150
单位
Unit
V
V
V
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=1mA
IE=0
VCEO IC=10mA IB=0
VEBO IE=1mA
IC=0
Collector Cut-Off Current
ICBO VCB=600V IE=0
Collector cut-off current
ICEO VCE=400V IB=0
Emitter Base Cut-Off Current
IEBO VEB=9.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE VCE=5V
VCE(sat) IC=100mA
IC=100mA
Ib=20mA
Base to Emitter Saturation Voltage VBE(sat) IC=100mA Ib=20mA
Fall time
Storage time
Transition Frequency
tf VCE=5V
IC=0.1A
tf (UI9600)
fT
VCE=10V
f=1MHz
IC=50mA
最小值 典型值 最大值 单位
Min Typ Max Unit
600 V
400 V
9.0 V
0.1 mA
0.1 mA
0.1 mA
10 40
0.5 V
1.2 V
0.8 μS
3.0 μS
5 MHz
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