Chip LED. LNJ911W8BRU Datasheet

LNJ911W8BRU LED. Datasheet pdf. Equivalent

Part LNJ911W8BRU
Description Hight Bright Surface Mounting Chip LED
Feature Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). Forward curre.
Manufacture Panasonic
Datasheet
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Light Emitting Diodes This product complies with the RoHS D LNJ911W8BRU Datasheet
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LNJ911W8BRU
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ911W8BRU
Hight Bright Surface Mounting Chip LED
3216 FD Type
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD 40
Forward current
IF 10
Pulse forward current *
IFP 50
Reverse voltage
VR 5
Operating ambient temperature
Topr –25 to +85
Storage temperature
Tstg –30 to +100
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
mW
mA
mA
V
°C
°C
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity *
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
Note) *: Measurement tolerance: ±20%
IO IF
100
IO IF = 5 mA
IR VR = 5 V
VF IF = 5 mA
λP IF = 5 mA
Δλ IF = 5 mA
IF VF
100
50 50
30 30
Lighting Color
Blue
Min Typ Max Unit
4.5 8.5
mcd
10 µA
3.2 3.7
V
470 nm
30 nm
Relative luminous intensity Ta
1 000
500
300
10 10 100
5 5 50
3 3 30
1
1
3 5 10
30 50 100
Forward current IF (mA)
1
2.0 3.0 4.0 5.0 6.0
Forward voltage VF (V)
10
20
0
20 40 60
80 100
Ambient temperature Ta (°C)
Relative luminous intensity  λP
IF Ta
100
Directive characteristics
80
20° 10° 0° 10° 20°
30° 30°
60
40° 80°
40°
50° 50°
40
60°
60° 60°
70° 40°
70°
20
80° 20°
80°
0 90°
90°
350 400 450 500 550 100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λP (nm)
Relative luminous intensity (%)
10
5
0
0 20 40 60 80 100
Ambient temperature Ta (°C)
Publication date: January 2009
SHD00683BEK
1



LNJ911W8BRU
LNJ911W8BRU
This product complies with the RoHS Directive (EU 2002/95/EC).
Package (Unit: mm)
KLTFTN2K1100
Pin name
1: Anode
2: Cathode
2 SHD00683BEK





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