P-Channel MOSFET. APM2323A Datasheet

APM2323A MOSFET. Datasheet pdf. Equivalent

Part APM2323A
Description P-Channel MOSFET
Feature APM2323A P-Channel Enhancement Mode MOSFET Features • -20V/-1.5A , RDS(ON)=130mΩ(typ.) @ VGS=-4.5V.
Manufacture Anpec Electronics
Datasheet
Download APM2323A Datasheet

APM2323A P-Channel Enhancement Mode MOSFET Features • -20V APM2323A Datasheet
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APM2323A
APM2323A
P-Channel Enhancement Mode MOSFET
Features
-20V/-1.5A ,
RDS(ON)=130m(typ.) @ VGS=-4.5V
RDS(ON)=170m(typ.) @ VGS=-2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Pin Description
D
G
S
Top View of SOT-23
S
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P-Channel MOSFET
Ordering and Marking Information
APM2323
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2323A :
M23X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
www.anpec.com.tw



APM2323A
APM2323A
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA*
Note:
Thermal Resistance-Junction to Ambient
*Surface Mounted on 1in2 pad area, t 10sec.
VGS=-4.5V
TA=25°C
TA=100°C
Rating
-20
±10
-1.5
-6
-1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2323A
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
-20
V
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
TJ=85°C
-1
µA
-30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-0.45 -0.7 -1
V
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
±100 nA
RDS(ON) a
Drain-Source On-state
Resistance
VSDa Diode Forward Voltage
VGS=-4.5V, IDS=-1.5A
VGS=-2.5V, IDS=-1A
ISD=-1A, VGS=0V
130 170
m
170 220
-0.7 -1.3 V
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-1.5A
46
0.6 nC
0.7
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
2
www.anpec.com.tw





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