MOS FET. FK330601 Datasheet

FK330601 FET. Datasheet pdf. Equivalent


Part FK330601
Description Silicon N-channel MOS FET
Feature This product complies with the RoHS Directive (EU 2002/95/EC). FK330601 Silicon N-channel MOS FET F.
Manufacture Panasonic
Datasheet
Download FK330601 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC FK330601 Datasheet
DReovcisNioon. . T2 T4-EA-12592 FK3306010L Silicon N-channe FK3306010L Datasheet
Recommendation Recommendation Datasheet FK330601 Datasheet




FK330601
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330601
Silicon N-channel MOS FET
For switching circuits
Overview
FK330601 is N-channel small signal MOS FET employed small size surface
mounting package.
Features
High-speed switching
Low drain-source ON resistance: RDS(on) typ. = 8 W (VGS = 2.5 V)
Small size surface mounting package: SSSMini3-F2-B
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
Drain current
ID
Peak drain current
IDP
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
Rating
60
±12
100
200
100
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package
Code
SSSMini3-F2-B
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbol: CV
(D)
3
12
(G) (S)
Publication date: July 2010
Ver. CED
1



FK330601
FK330601
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0
60
Drain-source cutoff current
IDSS VDS = 60 V, VGS = 0
1.0
Gate-source cutoff current
IGSS VGS = ±10 V, VDS = 0
±10
Gate threshold voltage
Drain-source ON resistance
VTH
RDS(on)
ID = 1.0 mA, VDS = 3 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
0.9 1.2 1.5
8 15
6 12
Forward transfer admittance
YfsID = 10 mA, VDS = 3 V, f = 1 kHz
20 60
Short-circuit input capacitance (Common source) Ciss
12
Short-circuit output capacitance (Common source) Coss VDS = 3 V, VGS = 0, f = 1 MHz
7
Reverse transfer capacitance (Common source)
Crss
3
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V,
RL = 300 W
100
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V,
RL = 300 W
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VGS = 0 V to 3 V
VIN
50
G
VDD = 3 V
ID = 10 mA
RL = 300
D VOUT
VIN
VOUT
S
90%
10%
10%
90%
ton toff
Unit
V
mA
mA
V
W
W
mS
pF
pF
pF
ns
ns
2 Ver. CED







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)