MOS FET. FC694601 Datasheet

FC694601 FET. Datasheet pdf. Equivalent


Part FC694601
Description Silicon N-channel MOS FET
Feature This product complies with the RoHS Directive (EU 2002/95/EC). FC694601 Silicon N-channel MOS FET F.
Manufacture Panasonic
Datasheet
Download FC694601 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC FC694601 Datasheet
Doc No. TT4-EA-12652 Revision. 2 Product Standards MOS FET FC6946010R Datasheet
Recommendation Recommendation Datasheet FC694601 Datasheet




FC694601
This product complies with the RoHS Directive (EU 2002/95/EC).
FC694601
Silicon N-channel MOS FET
For switching circuits
Overview
FC694601 is N-channel dual type small signal MOS FET employed small size
surface mounting package.
Features
Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V)
High-speed switching
Small size surface mounting package: SSMini6-F3-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
FET1 Gate-source surrender voltage
FET2 Drain current
VGSS
ID
Peak drain current
IDP
Total power dissipation
PT
Overall Channel temperature
Tch
Storage temperature
Tstg
Rating
60
±12
100
200
125
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package
Code
SSMini6-F3-B
Pin Name
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
Marking Symbol: V6
Internal Connection
(D1) (G2) (S2)
6 54
FET1
FET2
1 23
(S1) (G1) (D2)
Publication date: February 2011
Ver. AED
1



FC694601
FC694601
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0
60
Drain-source cutoff current
IDSS VDS = 60 V, VGS = 0
1.0
Gate-source cutoff current
IGSS VGS = ±10 V, VDS = 0
±10
Gate threshold voltage
Drain-source ON resistance
VTH
RDS(on)
ID = 1.0 mA, VDS = 3.0 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
0.9 1.2 1.5
8 15
6 12
Forward transfer admittance
YfsID = 10 mA, VDS = 3.0 V
20 60
Short-circuit input capacitance (Common source) Ciss
12
Short-circuit output capacitance (Common source) Coss VDS = 3 V, VGS = 0, f = 1 MHz
7
Reverse transfer capacitance (Common source)
Crss
3
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V,
ID = 10 mA
100
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V,
ID = 10 mA
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VGS = 0 V to 3 V
VIN
50
G
VDD = 3 V
ID = 10 mA
RL = 300
D VOUT
VIN
VOUT
S
90%
10%
10%
90%
ton toff
Unit
V
mA
mA
V
W
W
mS
pF
pF
pF
ns
ns
2 Ver. AED







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