N-Channel MOSFET. S80N18R Datasheet

S80N18R MOSFET. Datasheet pdf. Equivalent


Part S80N18R
Description N-Channel MOSFET
Feature SI-TECH SEMICONDUCTOR CO.,LTD N-Channel MOSFET S80N18R/S Features █ 80V,180A,Rds(on)(typ)=3mΩ @Vg.
Manufacture SI-TECH
Datasheet
Download S80N18R Datasheet


SI-TECH SEMICONDUCTOR CO.,LTD N-Channel MOSFET S80N18R/S S80N18R Datasheet
Recommendation Recommendation Datasheet S80N18R Datasheet




S80N18R
SI-TECH SEMICONDUCTOR CO.,LTD
N-Channel MOSFET
S80N18R/S
Features
80V,180A,Rds(on)(typ)=3m@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current (TC=25)
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25)
Derating Factor above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Value
80
180
120
680
± 25
800
348
2.3
-55 to +175
-55 to +175
Units
V
A
A
A
V
mJ
W
W/
Symbol
Rth j-c
Rth c-s
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Max.
0.43
0.5
62.5
Units
/ W
/ W
/ W
- 1 - Mar.2016



S80N18R
SI-TECH SEMICONDUCTOR CO.,LTD
S80N18R/S
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VDS=78V, VGS=0V
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDD=40V
VGS=10V
ID=40A
(Note 3)
VDD=40V,VGS=10V
ID=40A,RG=6
TC=25
(Note 3)
VDS=25V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
80 -
-V
- - 1 uA
- - 100 nA
- - -100 nA
2.5 -
3.5 V
- 3 4 m
- 155 - nC
- 27 - nC
- 54 - nC
- 28 - ns
- 18 - ns
- 44 - ns
- 55 - ns
- 6420 -
pF
- 1030 -
pF
- 560 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=45A
tr r Reverse Recovery Time
VGS=0V, IS=45A
Qr r Reverse Recovery Charge
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, VDD=50V, RG=25Ω , Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 180 A
- - 680 A
- - 1.3 V
- 30 150 ns
- 54 650 nC
- 2 - Mar.2016







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