Drop-Out Regulator. TCR4DG245 Datasheet

TCR4DG245 Regulator. Datasheet pdf. Equivalent


Part TCR4DG245
Description 420 mA CMOS Low Drop-Out Regulator
Feature TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4DG series 420 mA CMOS L.
Manufacture Toshiba
Datasheet
Download TCR4DG245 Datasheet


TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon TCR4DG245 Datasheet
Recommendation Recommendation Datasheet TCR4DG245 Datasheet




TCR4DG245
TCR4DG series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR4DG series
420 mA CMOS Low Drop-Out Regulator with inrush current protection circuit
The TCR4DG series are CMOS general-purpose single-output
voltage regulators with an on/off control input, featuring low dropout
voltage, low output noise voltage and low inrush current.
These voltage regulators are available in fixed output voltages
between 1.0 V and 4.5 V and capable of driving up to 420 mA.
They feature over-current protection, over-temperature protection,
Inrush current protection circuit and Auto-discharge function.
The TCR4DG series are offered in the ultra small plastic mold
package WCSP4E (0.645 mm x 0.645 mm; t 0.43 mm (max)). It has
WCSP4E
a low dropout voltage of 193 mV (3.3 V output, IOUT = 420 mA) with
Weight: 0.34 mg ( typ.)
low output noise voltage of 38 μVrms (2.5 V output) and a load
transient response of only VOUT = ±115 mV ( IOUT = 1 mA 420 mA, COUT =1.0 μF).
As small ceramic input and output capacitors can be used with the TCR4DG series, these devices are ideal for portable
applications that require high-density board assembly such as cellular phones.
Features
Low Drop-Out voltage
VDO = 193 mV (typ.) at 3.3 V-output, IOUT = 420 mA
Low output noise voltage
VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz f 100 kHz
Fast load transient response (VOUT = ±115 mV (typ.) at IOUT = 1 420 mA, COUT =1.0 μF )
High ripple rejection ( R.R = 70 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f = 1 kHz )
Over-current protection
Over-temperature protection
Inrush current protection circuit
Auto-discharge function
Pull down connection between CONTROL and GND
Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF )
Ultra small package WCSP4E (0.645 mm x 0.645 mm ; t 0.43 mm (max))
Start of commercial production
2017-04
1 2017-05-12



TCR4DG245
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Input voltage
Control voltage
Output current
Power dissipation
Operation temperature range
Junction temperature
Storage temperature range
Symbol
VIN
VCT
IOUT
PD
Topr
Tj
Tstg
Rating
Unit
6.0
-0.3 to 6.0
420
800 (Note1)
-40 to 85
150
-55 to 150
V
V
mA
mW
°C
°C
°C
TCR4DG series
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1:
Rating at mounting on a board
Board material: Glass epoxy(FR4)
Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5 mm x 24
Pin Assignment (Top view)
12
A
B
12
A VIN VOUT
B
CONTROL
GND
2 2017-05-12







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