Operational Amplifiers. LH2011C Datasheet

LH2011C Amplifiers. Datasheet pdf. Equivalent


Part LH2011C
Description Dual Operational Amplifiers
Feature o T"'" oT"'" CI :J: ~National ~ Semiconductor ....I iii T"'" oT"'" LH2011/LH2011 B/LH2011 C Du.
Manufacture National Semiconductor
Datasheet
Download LH2011C Datasheet


o T"'" oT"'" CI :J: ~National ~ Semiconductor ....I iii LH2011C Datasheet
Recommendation Recommendation Datasheet LH2011C Datasheet




LH2011C
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The LH2011 series of dual operational amplifiers contain a
pair of LM11 op amps in a single hermetic package, com-
The LH2011 is internally compensated, but external com-
pensation may be added for improved frequency stability,
bining the best features of existing bipolar and FET op particularly with capacitive loads.. Offset voltage bal-
amps. The LH2011 is similar to the LH2108A, except that ancing is also provided, with the balance range determined
input currents have been reduced by more than a factor of by a low-resistance potentiometer.
ten. Offset voltage and drift have also been improved.
Otherwise, the device is the electrical equivalent of the
LH2108, except that the negative common-mode limit is
Compared to FETs, the device provides inherently lower 0.6V less, performance is specified down to ± 2.5V
offset voltage and offset voltage drift, along with at least and the guaranteed output drive has been increased to
an order of magnitude better long-term stability. Low fre- ± 2 mAo The input noise is somewhat higher, but amplifier
quency noise is also s9mewhat reduced. Bias current is noise is obscured by resistor noise with higher source
significantly lower even under laboratory conditions, and resistances.
the low drift makes compensation practical. Offset cur-
ren! is almost unmeasurable. Although not as fast as
FETs, it does have a much lower power drain. This low
dissipation has the added advantage of eliminating warm
up time in critical applications.
The LH2011 has applications as electrometer amplifiers,
charge integrators, analog memories, low frequency ac-
tive filters or for frequency shaping in slow servo loops. It
can be substituted for existing circuits to provide im-
proved performance or eliminate trimming operations.
, Typical characteristics for 25°C (- 55°C to 125°C) are:
The greater precision can also be used to extend the
• Offset voltage: 100 {tV (200 {tV)
• Bias current: 25 pA (65 pAl .
dynamic range of logarithmic amplifiers, light meters and
solid-state particle detectors.
• Offset current: 0.5 pA (3 pAl
• Temperature drift: 1 {tV/oC
The LH2011 is manufactured with standard bipolar proc-
essing using super-gain transistors.
• Long-term stability: 10 {tV/year
Connection Diagrams
CaMP 15
INV INPUT 4
NON.INV INPUT 5
1 v+
Dual-In-Line Package
Flat Packa~e
{""'" ,
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NON.INV INPUT 13
TOPVIEW
Order Number LH2011D, LH2011BD,
or LH2011CD
See Package D16C
1-78
TOP VIEW
Order Number LH2011F
or LH2011BF
See Package F16B



LH2011C
Absolute Maximum Ratings
Vs Total Supply Voltage
40V
liN Input Current (Note 1)
±10mA
PD Power Dissipation at 25°C
Derate Linearly above 100°C at 100°C/W
500mW
Isc Output Short·Circuit Duration (Note 2)
TJ Junction Temperature
T5tg Storage Temperature Range
TA Operating Temperature Range
LH2011CD
LH2011D, LH2011 F
LH2011 SO, LH2011 SF
Indefinite
150°C
- 65°C to + 150°C
-25°Cto +85°C
- 55°C to + 125°C
-55°Cto +125°C
Lead Temperature (Soldering, 10 seconds)
30QoC
Electrical Characteristics Vs = ± 15V, TMIN:5TJ :5TMAX unless noted.
Parameter
Conditions
Vas Input Offset
Voltage
los Input Offset Note 3
Current
IB Input Bias
Current
RIN Input Resistance
tNos/D.T Offset Voltage
Drift
I TJ =25°C
I TJ = 25°C
I TJ =25°C
LH2011
LH2011 B
Min Typ Max Min Typ Max
0.1 0.3
0.6
0.5 10
30
25 50
150
1011
13
0.2 0.6
1.1
1 10
30
40 100
300
10 11
25
.:lIB/D.T Bias Current Drift Note 4
0.5 1.5
.:llos/.:lT Offset Current
20
Drift
IAv
Large Signal
Vs= ± 15V
TJ =25°C
100 300
Voltage Gain
10= ±2 rnA
Vo= ± 12V
Vo= ±11.5V
Vs= ± 15V
10 = ±0.5 mA
I TJ =25°C
Va = ±12V
50
250 1200
Vo= ± 11.5V
100
CMRR
PSRR
Common· Mode
Rejection
Power Supply
I TJ =25°C
VCM = -13V, + 14V
I TJ=25°C
110 130
100
100 118
Rejection Ratio Vs= ±2.5V to ±20V
96
Is Supply Current
.1 TJ =25°C
0.3 0.6
0.8
0.8 3
20
100 300
50
250 1200
100
110 130
100
100 118
96
0.3 0.8
1
Isc
Output Short
TJ =TMAX
Circuit Current
±15 ±15
LH2011C
Units
Min Typ Max
0.5 1
mV
1.3
4 25
pA
50
70 180
400
10 11
pA
n
3 INioC
1.4 pA/oC
50 fArC
50 300
15
90 800
30
96 110
90
84 100
80
0.3
±15
V/mV
dB
dB
0.8
rnA
1
rnA
Note1: The inputs are shunted with back·to·back diodes for overvoltage protection. Therefore. excessive current will flow if a differential input voltage in ex·
cess of 1V is applied between the inputs unless some limiting resistance is used. In addition. a 2 kn minimum resistance in each input is advised to avoid
possible latch·up initiated by supply reversals.
Note 2: Current limiting protects the output when it is shorted to ground or any voltage less than the supplies. With continuous overloads. package dissipa·
tion must be taken into account and heat sinking provided when necessary.
= = = =Note 3: These specifications apply for test at Vs ± 15V and VCM -12.5V (-13V at 25°C). 14V; Vs ± 20V and VCM OV; in addition. Vas is also tested at
Vs = ± 2.5V and VCM = OV.
Nole 4: Drift parameters are sample tested to 5% LTPD at the samo conditions as Note 3. The values are average·calculated from measurements at 25°C and
1250C.
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