EMI Filter. AOZ8010 Datasheet

AOZ8010 Filter. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AOZ8010
AOZ8010
8-Line EMI Filter with Integrated ESD Protection
General Description
The AOZ8010 is an 8-line device integrating EMI filtering
with ESD protection for each line. It is designed to
suppress unwanted EMI/RFI signals and provide electro-
static discharge (ESD) protection in portable electronic
equipment. This state-of-the-art device utilizes AOS
leading edge Trench Vertical Structure [TVS]2
technology for superior clamping performance and filter
attenuation over the full operating display range. The
AOZ8010 has been optimized for protection of color LCD
displays and CCD camera lines in cellular phones and
other portable consumer electronic devices.
The AOZ8010 consists of eight identical circuits
comprised of TVS diodes for ESD protection, and a
resistor–capacitor network for EMI/RFI filtering.
A series resistor value of 100and a capacitance
value of 28pF are used to achieve -35dB minimum
attenuation from 800MHz to 2.2GHz. The TVS diodes
provide effective suppression of ESD voltages in excess
of ±18kV (air discharge) and ±18kV (contact discharge).
This exceeds IEC 61000-4-2, level 4 ESD immunity test.
The AOZ8010 comes in an RoHS compliant,
1.6mm x 4.0mm TDFN or DFN package and is rated over
a -40°C to +85°C ambient temperature range.
Features
8 lines for EMI filtering and ESD protection:
Exceeds IEC 61000-4-2, level 4 (ESD) immunity test
±18kV (air discharge) and ±18kV (contact discharge)
Trench Vertical Structure [TVS]2 ™ based technology
used to achieve excellent ESD clamping & filter
performance over the full operating display range
Filter performance: -35db attenuation from 800MHz to
2.2GHz
Low operating voltage: 5.0V
Capacitance stability over wide range of voltages and
temperatures
TDFN or DFN package: 1.6 x 4.0mm
Pb-free device
Applications
EMI filtering and ESD protection for data lines
LCD displays, camera interface, I/O interface
Portable handheld devices, cell phones,
PDA phones
Typical Application
D0
CH1
D1
CH2
LCD/Camera
Module
D7
CH8
Rev. 2.6 September 2009
Figure 1.
www.aosmd.com
Page 1 of 8


AOZ8010 Datasheet
Recommendation AOZ8010 Datasheet
Part AOZ8010
Description 8-Line EMI Filter
Feature AOZ8010; AOZ8010 8-Line EMI Filter with Integrated ESD Protection General Description The AOZ8010 is an 8-li.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOZ8010 Datasheet




Alpha & Omega Semiconductors AOZ8010
AOZ8010
Ordering Information
Part Number
AOZ8010DTL
AOZ8010DIL*
Ambient Temperature Range
-40°C to +85°C
Package
TDFN-16
DFN-16
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.
* Not recommended for new designs.
Pin Configuration
Environmental
RoHS Compliant
Green Product
1 16
16
15
14
13
12
11
10
9
TDFN-16/DFN-16
(Bottom View)
1
2
3
4
5
6
7
8
2
3
4
5
6
7
8
15
14
13
12
11
10
9
Pin Description
Pin Number
1,16
2, 15
3, 14
4, 13
5, 12
6, 11
7, 10
8, 9
Exposed Pad
Rev. 2.6 September 2009
Top View
Pin Name
CH 1
CH 2
CH 3
CH 4
CH 5
CH 6
CH 7
CH 8
GND
Pin Function
Channel 1 Connections
Channel 2 Connections
Channel 3 Connections
Channel 4 Connections
Channel 5 Connections
Channel 6 Connections
Channel 7 Connections
Channel 8 Connections
Common Ground Connection
www.aosmd.com
Page 2 of 8



Alpha & Omega Semiconductors AOZ8010
AOZ8010
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Rating
Storage Temperature (TS)
ESD Rating per IEC61000-4-2, contact(1)
ESD Rating per IEC61000-4-2, air(1)
ESD Rating per Human Body Model(2)
-65°C to +150°C
±18kV
±18kV
±30kV
Notes:
1. IEC 61000-4-2 discharge with CDischarge = 150pF, RDischarge = 330.
2. Human Body Discharge per MIL-STD-883, Method 3015 CDischarge = 100pF, RDischarge = 1.5k.
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
VRWM
VBR
IR
VCL
Reverse Working Voltage
Reverse Breakdown Volt-
age
Reverse Leakage Current
Signal Clamp Voltage
RCH Total Series Resistance
CCH Channel Capacitance
fC Cut-off Frequency
Attenuation from 800MHz
to 2.2GHz
Attenuation from 800MHz
to 2.2GHz
(3)(8)
IT = 1mA(4)
Conditions
VRWM = 3.3V
ILOAD = 12A, positive clamp(5)(8)
ILOAD = 12A, negative clamp(5)(8)
IR = 20mA
Input to Ground(6)(7)(8)
Measured with 50source and 50load
termination
VR = 0V Measured with 50source and 50
load termination
VR = 5V Measured with 50source and 50
load termination
Min.
6
Typ.
7
Max.
5.0
8
Units
V
V
0.1 µA
9.5 V
-8.5
85 100 115
26 28 30 pF
90 MHz
-35 dB
-35 dB
Notes:
3. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level.
4. VBR is measured at the pulse test current IT.
5. Measurements performed using a 100ns Transmission Line Pulse (TLP) system.
6. Total capacitance is equal to 2 x CCH.
7. Measured at 25°C, VR = 2.5V, f = 1.0MHz.
8. Guaranteed by design.
Rev. 2.6 September 2009
www.aosmd.com
Page 3 of 8







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)