Power Rectifier. SBRS8340T3G Datasheet

SBRS8340T3G Rectifier. Datasheet pdf. Equivalent


ON Semiconductor SBRS8340T3G
MBRS320T3G, SBRS8320T3G,
MBRS330T3G, NRVBS330T3G,
MBRS340T3G, SBRS8340T3G
Surface Mount
Schottky Power Rectifier
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
(0.5 V Max @ 3.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard-Ring for Stress Protection
Device Passes ISO 7637 Pulse #1
SBRS8 and NRVB Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable*
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
Device Meets MSL 1 Requirements
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
SMC 2LEAD
CASE 403AC
MARKING DIAGRAM
AYWW
B3xG
G
B3x = Device Code
x = 2, 3 or 4
A = Assembly Location**
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
Device
Package
Shipping
MBRS320T3G
MBRS330T3G
SMC
(PbFree)
SMC
(PbFree)
2,500 /
Tape & Reel
2,500 /
Tape & Reel
MBRS340T3G
NRVBS330T3G
SBRS8320T3G*
SBRS8340T3G*
SMC
(PbFree)
SMC
(PbFree)
SMC
(PbFree)
SMC
(PbFree)
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
June, 2017 Rev. 13
1
Publication Order Number:
MBRS340T3/D


SBRS8340T3G Datasheet
Recommendation SBRS8340T3G Datasheet
Part SBRS8340T3G
Description Surface Mount Schottky Power Rectifier
Feature SBRS8340T3G; MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Po.
Manufacture ON Semiconductor
Datasheet
Download SBRS8340T3G Datasheet




ON Semiconductor SBRS8340T3G
MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,
SBRS8340T3G
MAXIMUM RATINGS
Rating
Symbol
MBRS320T3G, MBRS330T3G, MBRS340T3G,
SBRS8320T3G NRVBRS330T3G SBRS8340T3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
VRRM
VRWM
VR
IF(AV)
20 30 40
3.0
4.0
@
@
TTLL
=
=
110°C
105°C
V
A
Nonrepetitive Peak Surge Current
IFSM
A
(Surge applied at rated load conditions halfwave,
80
single phase, 60 Hz)
Operating Junction Temperature
ISO 7637 Pulse #1
(100 V, 10W)
TJ
65 to +150
5000
°C
Pulses
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoLead
ELECTRICAL CHARACTERISTICS
RqJL 11 °C/W
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 25°C)
VF
0.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR mA
2.0
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10 10
TJ = 125°C
1
TJ = 100°C
TJ = 25°C
TJ = 40°C
0.1
0
TJ = 65°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.0
TJ = 125°C
1
TJ = 100°C
TJ = 25°C
TJ = 40°C
TJ = 65°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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2



ON Semiconductor SBRS8340T3G
MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,
SBRS8340T3G
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
1.E01
1.E02 TJ = 125°C
1.E01
1.E02 TJ = 125°C
1.E03
1.E04
TJ = 100°C
1.E05 TJ = 25°C
1.E03 TJ = 100°C
1.E04
TJ = 25°C
1.E05
1.E060
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
40 1.E06 0
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
40
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
090
dc
SQUARE WAVE
Freq = 20 kHz
RqJL = 11°C/W
100 110 120 130 140
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
150
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
SQUARE
WAVE
IPK/IO = p
IPK/IO = 5
dc
0.5 1 1.5 2 2.5 3 3.5 4 4.5
IO, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
5
700
TYPICAL CAPACITANCE AT 0 V = 658 pF
600
TJ = 25°C
500
400
300
200
100
0
0 4 8 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance
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