4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Description
Features
Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes) Fast Erase Cycle Time – 7 Seconds Byte-by-Byte Programming – 30 ...
