4-Megabit (256K x 16) 3-volt Only CMOS Flash Memory
Description
Features
Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns
Internal Erase/Program Control Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds
Word-By-W...
