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GPT05N65

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POWER FIELD EFFECT TRANSISTOR


Description
GENERAL DESCRIPTION GPT05N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high volta...



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GPT05N65

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