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BUT211

Part Number	BUT211
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced p...
Datasheet	BUT211 PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP.
MAX.
850 400 5 10 100 2.
0 0.
1 UNIT V V A A W V µs Tmb ≤ 25 ˚C IC = 3.
0 A; IB = 0.
4 A ICon = 3.
0 A; IBon = 0.
3 A...

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