Bridge Rectifiers. EDB101 Datasheet

EDB101 Rectifiers. Datasheet pdf. Equivalent

Part EDB101
Description Silicon Bridge Rectifiers
Feature Features Rating to 400V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board.
Manufacture LGE
Datasheet
Download EDB101 Datasheet

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101 THRU E EDB101 Datasheet
Production specification SILICON BRIDGE RECTIFIERS EDB101- EDB101 Datasheet
Features Rating to 400V PRV Surge overload rating to 30 Ampe EDB101 Datasheet
EDB101 THRU EDB105 SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS EDB101 Datasheet
EDB101 THRU EDB106 SINGLE-PHASE GLASS PASSIVATED SUPER FAST EDB101 Datasheet
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101S THRU EDB101S Datasheet
EDB101S THRU EDB105S SINGLE PHASE 1.0AMP GLASS PASSIVATED B EDB101S Datasheet
Production specification SILICON BRIDGE RECTIFIERS EDB101S EDB101S Datasheet
EDB101S THRU EDB106S SINGLE-PHASE GLASS PASSIVATED SUPER FA EDB101S Datasheet
Recommendation Recommendation Datasheet EDB101 Datasheet





EDB101
Features
Rating to 400V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 1.0 grams
EDB101-EDB106
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
DB-1
1± 0.1
8.3± 0.1
5± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EDB
101
EDB
102
EDB
103
EDB
104
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @TA=55
Peak forw ard surge current
VRRM
VRMS
VDC
IF(AV)
50
35
50
8.3ms single half-sine-w ave
superimposed on rated load
IFSM
Maximum instantaneous forw ard voltage
at 1.0 A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (NOTE 1)
trr
Typical junction calacitance (NOTE 2)
CJ
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Test conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts.
100 150 200
70 105 140
100 150 200
1.0
30.0
1.0
10.0
1.0
50
15
- 55 ---- + 150
- 55 ---- + 150
EDB
105
300
210
300
EDB
106
400
280
400
10
UNITS
V
V
V
A
A
V
μA
mA
nS
pF



EDB101
EDB101-EDB106
Silicon Bridge Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG.2 -- TYPICAL FORWARD CURRENT
DERATING CURVE
50 10
N 1. N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
+0.5A
0
-0.25A
trr
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5OΩ
SET TIMEBASEFOR
10 ns /cm
2
Single phaes
half wave 60Hz
resistive or
inductive load
1
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE ( )
FIG.3 -- TYPICAL REVERSE CHARACTERISTICS
100
TJ=150
10
TJ=100
1.0
FIG.4 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1 .0
0 .1
0.1 TJ=25
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 -- MAXIMUM NON-REPETITIVEFORWARDSURGECURRENT
.0 1
TJ=125
Pulse W idth
=300u S
.0010 0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.6 -- TYPICAL JUNCTION CAPACITANCE
60
50
8.3ms Single Half Sine Wave
40 TJ=25
30
20
10
0
1
5 10
50
NUMBER OF CYCLES AT 60Hz
100
200
100
60
40
20
10
6
4
2
1
.1
TJ=25
EDB101-EDB104
EDB105-EDB106
1 4 10
100
REVERSE VOLTAGE, VOLTS





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