BRIDGE RECTIFIER. EDB102 Datasheet

EDB102 RECTIFIER. Datasheet pdf. Equivalent

Part EDB102
Description SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Feature EDB101 THRU EDB105 SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Features · .
Manufacture DIYI
Datasheet
Download EDB102 Datasheet

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101 THRU E EDB102 Datasheet
Production specification SILICON BRIDGE RECTIFIERS EDB101- EDB102 Datasheet
Features Rating to 400V PRV Surge overload rating to 30 Ampe EDB102 Datasheet
EDB101 THRU EDB105 SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS EDB102 Datasheet
EDB101 THRU EDB106 SINGLE-PHASE GLASS PASSIVATED SUPER FAST EDB102 Datasheet
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101S THRU EDB102S Datasheet
EDB101S THRU EDB105S SINGLE PHASE 1.0AMP GLASS PASSIVATED B EDB102S Datasheet
Production specification SILICON BRIDGE RECTIFIERS EDB101S EDB102S Datasheet
EDB101S THRU EDB106S SINGLE-PHASE GLASS PASSIVATED SUPER FA EDB102S Datasheet
Recommendation Recommendation Datasheet EDB102 Datasheet





EDB102
EDB101 THRU EDB105
SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass passivated die construction
· Low forward voltage drop
· High current capability
· High surge current capability
· Designed for surface mount application
· Plastic material-UL flammability 94V-0
-+
~~
DB-M
0.00980.25
0.00590.15
Mechanical Data
· Case: DB-M, molded plastic
· Terminals: plated leads solderable per
MIL-STD-202, Method 208
· Polarity: as marked on case
· Mounting position: Any
· Marking: type number
· Lead Free: For RoHS / Lead Free Version
0.0982.50
0.0832.10
0.0471.20
0.0370.95
0.0240.60
0.0160.40
0.3298.35
0.3137.95
0.1954.95
0.1794.55
0.2095.3
0.1934.9
0.3589.1
0.3358.5
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL EDB101
Dimensions in inches and millimeters
EDB102 EDB103 EDB104 EDB105 UNITS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100
200 400
600 V
VDC
RMS Reverse Voltage
VRMS
35
70
140 280 420 V
Average Rectified Output Current (Note 1)@TC=100IF(AV)
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
45 A
I2t Rating for Fusing (t < 8.3ms)
Forward Voltage per element @IF=1.0A
Peak Reverse Current
@TA=25
At Rated DC Blocking Voltage @TA=125
Maximum reverse recovery time
Typical Junction Capacitance per leg (Note 2)
Typical Thermal Resistance per leg
Operating and Storage Temperature Range
I2t
VFM
IR
TRR
CJ
RθJA
RθJL
TJ,TSTG
8.404
0.95 1.25
5.0
200
35
13
70
20
-55to+150
A2s
1.7 V
uA
ns
pF
/W
Note:1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
version:02
1 of 3
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EDB102
EDB101 THRU EDB105
Fig. 1 Output Current Derating Curve
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120
TC , CASE TEMPERATURE (°C)
160
Fig. 3 Maximum Peak Forward Surge Current (per leg)
60
40
20
TA = 25°C
Single Half Sine-Wave
Pulse Width =8.3ms
(JEDEC Method)
0
1.0
10
NUMBER OF CYCLES AT 60 Hz
Fig. 2 Typical Forward Characteristics (per leg)
10
EDB101-EDB103
1.0
EDB104
EDB105
0.1
0.01
TA= 25°C
Pulse Width = 300µs
0.3 0.69 0.9 1.2 1.5 1.8 2.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics (per element)
1000
100
TJ= 125°C
10
TJ = 25°C
1
0.1
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
version:02
2 of 3
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