BRIDGE RECTIFIERS. EDB102S Datasheet

EDB102S RECTIFIERS. Datasheet pdf. Equivalent

Part EDB102S
Description SILICON BRIDGE RECTIFIERS
Feature Production specification SILICON BRIDGE RECTIFIERS EDB101S--EDB106S SFEATURES z Rating to 1000V .
Manufacture GME
Datasheet
Download EDB102S Datasheet

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101S THRU EDB102S Datasheet
EDB101S THRU EDB105S SINGLE PHASE 1.0AMP GLASS PASSIVATED B EDB102S Datasheet
Production specification SILICON BRIDGE RECTIFIERS EDB101S EDB102S Datasheet
EDB101S THRU EDB106S SINGLE-PHASE GLASS PASSIVATED SUPER FA EDB102S Datasheet
Recommendation Recommendation Datasheet EDB102S Datasheet





EDB102S
Production specification
SILICON BRIDGE RECTIFIERS
EDB101S--EDB106S
SFEATURES
z Rating to 1000V PRVP
z Surge overload rating to 30 Amperes peak
z Ideal for printed circuit board
Pb
Lead-free
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
z Glass passivated chip junctions
z Plastic material has UL flammability classification94V-O
z Polarity symbols molded on body
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Maximum average forward Output current
@TA=55
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
100 150 200 300 400
70 105 140 210 280
100 150 200 300 400
1.0
30
Thermal Characteristics
UNITS
V
V
V
A
A
Characteristic
Typical junction calacitance (NOTE 2)
Operating junction temperature range
Storage temperature range
Symbol
CJ
TJ
TSTG
EDB101S
EDB102S EDB103S EDB104S
15
- 55 ---- + 150
- 55 ---- + 150
EDB105S EDB106S
10
Electrical Characteristics (@TA = 25°C unless otherwise specified)
UNITS
pF
Characteristic
Symbol EDB101S EDB102S
Maximum instantaneous forward voltage at
1.0 A
VF
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (NOTE 1)
IR
trr
NOTE: 1. Test conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHz and applied reverse voltage of 4.0 v olts.
EDB103S EDB104S
1.0
10.0
1.0
50
EDB105S
EDB106S
UNITS
V
μA
mA
ns
Document Number: DFM706AA
www.gmicroelec.com
1



EDB102S
SILICON BRIDGE RECTIFIERS
PACKAGE OUTLINE DIMENSIONS
I
-+
~~
K
A
G
FF
D
Production specification
EDB101S--EDB106S
DFS
Dim Min Max
A 8.20 8.60
B 6.10 6.50
C 2.35 2.65
D 9.80 10.20
E 0.15 0.35
F 0.90 1.50
G 0.20MAX
H 2.50 2.80
I 1.00 1.40
K 4.80 5.20
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
EDB101S--EDB106S DFS
Shipping
50unit/pipe
Document Number: DFM706AA
www.gmicroelec.com
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